december 2012 hvm-1055-f 1 < hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules CM1000E4C-66R ? i c 1000a ? v ces 3300v ? 1-element in a pack (for brake chopper) ? insulated type ? lpt-igbt / soft recovery diode ? alsic baseplate application traction drives, high reliability conv erters / inverters, dc choppers outline drawing & circuit diagram dimensions in mm
< hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1055-f) 2 maximum ratings symbol item conditions ratings unit v ge = 0v, t j = -40?+150c 3300 v ces collector-emitter voltage v ge = 0v, t j = ? 50c 3200 v v ges gate-emitter voltage v ce = 0v, t j = 25c 20 v i c dc, t c = 95c 1000 a i crm collector current pulse (note 1) 2000 a i e dc 1000 a i erm emitter current (note 2) pulse (note 1) 2000 a p tot maximum power dissipation (note 3) t c = 25c, igbt part 10400 w v iso isolation voltage rms, sinusoidal, f = 60hz, t = 1 min. 6000 v v e partial discharge extinction voltage rms, sinusoidal, f = 60hz, q pd 10 pc 2600 v t j junction temperature ? 50 ~ +150 c t jop operating junction temperature ? 50 ~ +150 c t stg storage temperature ? 55 ~ +150 c t psc short circuit pulse width v cc = 2500v, v ce v ces , v ge =15v, t j =150c 10 ? s electrical characteristics limits symbol item conditions min typ max unit t j = 25c ? ? 4.0 t j = 125c ? 4.0 ? i ces collector cutoff current v ce = v ces , v ge = 0v t j = 150c ? 24.0 ? ma v ge(th) gate-emitter threshold voltage v ce = 10 v, i c = 100 ma, t j = 25c 5.7 6.2 6.7 v i ges gate leakage current v ge = v ges , v ce = 0v, t j = 25c ? 0.5 ? 0.5 a c ies input capacitance ? 140.0 ? nf c oes output capacitance ? 8.7 ? nf c res reverse transfer capacitance v ce = 10 v, v ge = 0 v, f = 100 khz t j = 25c ? 4.0 ? nf q g total gate charge v cc = 1800v, i c = 1000a, v ge = 15v ? 10.7 ? c t j = 25c ? 2.45 ? t j = 125c ? 3.10 3.70 v cesat collector-emitter saturation voltage i c = 1000 a (note 4) v ge = 15 v t j = 150c ? 3.25 ? v t j = 25c ? 1.00 ? t j = 125c ? 0.95 1.25 t d(on) turn-on delay time t j = 150c ? 0.95 1.25 s t j = 25c ? 0.28 ? t j = 125c ? 0.30 0.50 t r turn-on rise time t j = 150c ? 0.30 0.50 s t j = 25c ? 1.40 ? t j = 125c ? 1.85 ? e on(10%) turn-on switching energy (note 5) t j = 150c ? 2.00 ? j t j = 25c ? 1.50 ? t j = 125c ? 1.95 ? e on turn-on switching energy (note 6) v cc = 1800 v i c = 1000 a v ge = 15 v r g(on) = 2.4 ? l s = 150 nh inductive load t j = 150c ? 2.15 ? j t j = 25c ? 2.70 ? t j = 125c ? 2.80 3.30 t d(off) turn-off delay time t j = 150c 2.85 3.30 s t j = 25c ? 0.30 ? t j = 125c ? 0.35 1.00 t f turn-off fall time t j = 150c ? 0.40 1.00 s t j = 25c ? 1.35 ? t j = 125c ? 1.65 ? e off(10%) turn-off switching energy (note 5) t j = 150c 1.70 ? j t j = 25c ? 1.50 ? t j = 125c ? 1.80 ? e off turn-off switching energy (note 6) v cc = 1800 v i c = 1000 a v ge = 15 v r g(off) = 8.4 ? l s = 150 nh inductive load t j = 150c ? 1.90 ? j
< hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1055-f) 3 electrical characteristics (continuation) limits symbol item conditions min typ max unit t j = 25c ? 2.15 ? t j = 125c ? 2.30 2.80 v ec emitter-collector voltage (note 2) i e = 1000 a (note 4) v ge = 0 v t j = 150c ? 2.25 ? v t j = 25c ? 0.50 ? t j = 125c ? 0.70 t rr reverse recovery time (note 2) t j = 150c ? 0.80 ? s t j = 25c ? 850 ? t j = 125c ? 1000 ? i rr reverse recovery current (note 2) t j = 150c ? 1050 ? a t j = 25c ? 700 ? t j = 125c ? 1150 q rr reverse recovery charge (note 2) t j = 150c ? 1350 ? c t j = 25c 0.70 ? t j = 125c ? 1.20 e rec(10%) reverse recovery energy (note 2) (note 5) t j = 150c ? 1.35 ? j t j = 25c 0.80 ? t j = 125c ? 1.35 e rec reverse recovery energy (note 2) (note 6) v cc = 1800 v i c = 1000 a v ge = 15 v r g(on) = 2.4 ? l s = 150 nh inductive load t j = 150c ? 1.55 ? j thermal characteristics limits symbol item conditions min typ max unit r th (j -c ) q junction to case, igbt part ? ? 12.0 k/kw junction to case, fwdi part ? ? 22.5 k/kw r th(j-c)d thermal resistance junction to case, clamp-di part ? ? 22.5 k/kw r th ( c-s ) contact thermal resistance case to heat sink, ? g rease = 1w/m k, d ( c-s ) = 100 ? m ? 7.0 ? k/kw mechanical characteristics limits symbol item conditions min typ max unit m t m8 : main terminals screw 7.0 ? 22.0 nm m s m6 : mounting screw 3.0 ? 6.0 nm m t mounting torque m4 : auxiliary terminals screw 1.0 ? 3.0 nm m mass ? 1.2 ? kg cti comparative tracking index 600 ? ? ? d a clearance 19.5 ? ? mm d s creepage distance 32.0 ? ? mm collector to emitter ? 16.5 ? nh l p ce parasitic stray inductance anode to cathode ? 33.0 ? nh r cc?+ee? internal lead resistance t c = 25c, collector to emitter ? 0.18 ? m ? r aa ?+kk? internal lead resistance t c = 25c, anode to cathode ? 0.36 ? m ? r g internal gate resistance t c = 25c ? 2.25 ? ? ? note1. pulse width and repetition rate shoul d be such that junction temperature (t j ) does not exceed t opmax rating(150c). 2. the symbols represent characteri stics of the anti-parallel, emitte r to collector free-wheel diode (fwd i ) and the brake chopper, anode to cathode clamp diode (clamp-di). 3. junction temperature (t j ) should not exceed t jmax rating (150c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. definition of all items is according to iec 60747, unless otherwise specified.
< hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1055-f) 4 performance curves output characteristics (typical) 0 40 0 80 0 1200 1600 2000 0123456 collector - emitter voltage [v] coll ector current [a] v ge = 9v v ge = 11 v v ge = 15v v ge = 13 v t j = 1 50 c v ge = 19v collector-emitter saturation voltag e characteristics (typical) 0 400 800 12 00 16 00 20 00 012345 collector-emitter saturation voltage [v] coll ector current [a] v ge = 15 v tj = 1 50 c tj = 1 25 c tj = 25c transfer characteristics (typical) 0 40 0 80 0 1200 1600 2000 024 681012 gate - emi tter voltage [v] coll ector current [a] tj = 25 c v ce = v ge tj = 1 50 c free-wheel diode forward characteristics (typical) 0 400 800 12 00 16 00 20 00 012345 emitter-collector voltage [v] emi tter current [a] tj = 1 50 c t j = 25 c t j = 1 25 c
< hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1055-f) 5 performance curves capacitance characteristics (typical) 1 10 100 10 00 0.1 1 10 100 coll ector-emitter voltage [v] capa citance [nf] ci es v ge = 0v, tj = 25c f = 10 0khz co es cres half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 0 40 0 80 0 1 20 0 1 60 0 20 00 collector current [a] switching energies [j/pulse] ere c v cc = 18 00 v, v ge = 15v r g(on) = 2.4 ? , r g( off) = 8.4 ? l s = 150nh, tj = 125c in duct ive l oa d eo ff eon gate charge characteristics (typical) -1 5 -1 0 -5 0 5 10 15 20 0481216 gate charge [c] gate-emitter voltage [v] v ce = 18 00v, i c = 1000a tj = 2 5 c half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 0 40 0 80 0 1 20 0 1 60 0 20 00 collector current [a] switching energies [j/pulse] erec v cc = 18 00 v, v ge = 15v r g(on) = 2.4 ? , r g( off) = 8.4 ? l s = 150nh, tj = 150c in duct ive l oa d eo ff eon
< hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1055-f) 6 performance curves half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 0 5 10 15 20 gate res ist or [ ohm] switching energies [j/pulse] erec v cc = 1800v, i c = 10 00a v ge = 15 v , l s = 15 0nh t j = 12 5c , i ndu cti ve lo ad eon eoff half-bridge switching time characteristics (typical) 0.0 1 0.1 1 10 10 0 10 0 10 00 1 00 00 collec t or c urrent [a] switching times [s] tf v cc = 18 00 v, v ge = 15v r g(on) = 2.4 ? , r g( off) = 8.4 ? l s = 1 50n h, t j = 1 25 c i n duct ive l oa d tr t d (on) td(off) half-bridge switching energy characteristics (typical) 0 1 2 3 4 5 6 7 05101520 gate res ist or [ ohm] switching energies [j/pulse] ere c v cc = 1800v, i c = 10 00a v ge = 15 v , l s = 15 0nh t j = 15 0c , i ndu cti ve lo ad eon eo ff half-bridge switching time characteristics (typical) 0.0 1 0.1 1 10 10 0 10 0 10 00 1 00 00 collec t or c urrent [a] switching times [s] tf v cc = 18 00 v, v ge = 15v r g(on) = 2.4 ? , r g( off) = 8.4 ? l s = 1 50n h, t j = 1 50 c i n duct ive l oa d tr td(on) td(off)
< hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1055-f) 7 performance curves free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 10 0 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] trr irr v cc = 18 00 v, v ge = 15v r g(on) = 2.4 ? , l s = 150 nh tj = 1 25 c, i n duct ive l oa d transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0. 001 0.01 0.1 1 10 tim e [s ] normalized transient thermal impedance r th(j-c )q = 12 .0 k/kw r th(j-c )d = 22. 5k/ kw free-wheel diode reverse recovery characteristics (typical) 0.1 1 10 10 0 100 1000 10000 emitter current [a] reverse recovery time [s] 10 100 1000 10000 reverse recovery current [a] trr irr v cc = 18 00 v, v ge = 15v r g(on) = 2.4 ? , l s = 150 nh tj = 1 50 c, i n duct ive l oa d ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? exp1 1 )( )( ? i t n i i cjth rz t 1234 r i [k/kw] : 0.0096 0.1893 0.4044 0.3967 ? i [sec] : 0.0001 0.0058 0.0602 0.3512
< hvigbt modules > CM1000E4C-66R high power switching use insulated type 4th-version hvigbt (high voltage insulated gate bipolar transistor) modules december 2012 (hvm-1055-f) 8 performance curves reverse bias safe operating area (rbsoa) 0 10 00 20 00 30 00 40 00 0 1000200030004000 collecto r-emitter voltage [v] coll ector current [a] v cc ? 25 00 v, v ge = 15v tj = 150 c, r g(o ff) = 8. 4 ? free-wheel diode reverse recovery safe operating area (rrsoa) 0 10 00 20 00 30 00 40 00 0 1000200030004000 emitter-collector voltage [v] reverse recovery current [a] v cc ? 25 00 v, di /d t < 6 ka/ s tj = 150 c short circuit safe operating area (scsoa) 0 4 8 12 16 0 1 000 20 00 3 000 40 00 collector-emitter voltage [v] coll ector current [ka] v cc ? 25 00v, v ge = 1 5v r g(on) = 2.4 ? , r g( off) = 8.4 ? t j = 1 50 c
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